The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jun. 30, 2017
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:
Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03B 27/32 (2006.01); G03F 9/00 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7084 (2013.01); G03F 9/708 (2013.01); G03F 9/7076 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract

A method for recovering alignment marks in a mark layer of a substrate, the method including providing a substrate with a mark layer covered by a resist layer; forming alignment marks in the mark layer, wherein an alignment mark is formed by: exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in the resist; forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist and subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.


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