The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Mar. 12, 2015
Umicore Ag & Co. KG, Hanau-Wolfgang, DE;
Wolf Schorn, Giessen, DE;
Jörg Sundermeyer, Marburg, DE;
Annika Frey, Hanau, DE;
Ralf Karch, Kleinostheim, DE;
Andreas Rivas-Nass, Bensheim, DE;
Eileen Woerner, Nidderau, DE;
Angelino Doppiu, Seligenstadt, DE;
Umicore AG & Co. KG, , DE;
Abstract
The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula:RGain high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl) or dialkylgallium chloride/alkylgallium dichloride mixture (RGaCl/RGaCl). The RGaClobtained or the RGaCl/RGaClmixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale. The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE) in semiconductor and microsystem technology.