The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Dec. 28, 2017
Applicant:

Spin Transfer Technologies, Inc., Fremont, CA (US);

Inventors:

Elizabeth Dobisz, Fremont, CA (US);

Pradeep Manandhar, Fremont, CA (US);

Assignee:

Spin Memory, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); G03F 7/075 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G03F 7/0035 (2013.01); G03F 7/0751 (2013.01); H01L 21/0274 (2013.01); H01L 27/222 (2013.01);
Abstract

A method for improving photo resist adhesion to an underlying hard mask layer. The method includes a cleaning step that includes applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of a wafer. The method further includes puddle developing the wafer for a first desired amount of time, and rinsing the wafer in running water for a second desired amount of time. The method further includes spin drying the wafer, and baking the wafer for a third desired amount of time. The method concludes with the proceeding of subsequent photolithographic processes on the wafer.


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