The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jul. 03, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Joon-Seok Moon, Seongnam-si, KR;
Dong Sik Kong, Hwaseong-si, KR;
Sung Won Yoo, Suwon-si, KR;
Hee Sun Joo, Seoul, KR;
Kyo-Suk Chae, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, device isolation film defining an active region of the substrate in which a gate trench extends, a gate insulating film disposed along sides and a bottom of the gate trench, a gate electrode disposed on the gate insulating film in the gate trench and having a first portion, a second portion on the first portion, and a third portion on the second portion, a first barrier film pattern interposed between the first portion of the gate electrode and the gate insulating film, a second barrier film pattern interposed between the second portion of the gate electrode and the gate insulating film, and a third barrier film pattern interposed between the third portion of the gate electrode and the gate insulating film. The work function of the first barrier film pattern is greater than the work function of the second barrier film pattern and less than the work function of the third barrier film pattern.