Three-dimensional memory device and manufacturing method thereof

Abstract

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes a plurality of bottom control gate lines, a plurality of bottom source lines, a stacked structure on the bottom source lines, a plurality of bit lines disposed on the stacked structure, and a plurality of pillar structures passing through the stacked structure. The stacked structure includes a plurality of stacked layers insulated from one another and respectively located at different levels. Each stacked layer includes a plurality of word lines. Each word line and the corresponding pillar structure, which is connected between the corresponding bit line and the corresponding bottom source line, define a memory cell. Each pillar structure includes an outermost ferroelectric layer, a conductive core gate column, and a surrounding channel layer disposed therebetween. The conductive core gate column is electrically connected to the corresponding bottom control gate line.