The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jul. 05, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Tieh-Chiang Wu, Taoyuan, TW;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/108 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01);
Abstract
A memory device and a method for fabricating the same are provided. The memory device includes a substrate, a first active region, a second active region, a gate structure, and a capping layer. The first active region and the second active region are alternately disposed in the substrate. The gate structure is disposed in the substrate and between the first active region and the second active region. The capping layer is over the gate structure to define a void therebetween.