The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Apr. 13, 2017
Applicant:
Ideal Power, Inc., Austin, TX (US);
Inventors:
William C. Alexander, Spicewood, TX (US);
Richard A. Blanchard, Los Altos, CA (US);
Assignee:
Ideal Power, Inc., Austin, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H03K 17/66 (2006.01); H01L 29/70 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 29/0615 (2013.01); H01L 29/0623 (2013.01); H01L 29/0642 (2013.01); H01L 29/1004 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/42304 (2013.01); H01L 29/732 (2013.01); H01L 29/7325 (2013.01); H03K 17/66 (2013.01); H01L 29/705 (2013.01);
Abstract
Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.