The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Aug. 30, 2017
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Chung-Hsien Liu, Taichung, TW;

Chun-Hsu Chen, Taichung, TW;

Lu-Ping Chiang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 27/11517 (2017.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 27/115 (2017.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/28273 (2013.01); H01L 21/76224 (2013.01); H01L 27/11517 (2013.01); H01L 27/11521 (2013.01); H01L 27/115 (2013.01); H01L 29/6684 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract

A memory structure including a substrate, stacked structures, at least one isolation structure, a second conductive layer, and a second dielectric layer is provided. The stacked structures are disposed on the substrate. Each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structures, and the first opening extends into the substrate. The isolation structure is disposed in the first opening and covers a sidewall of the first dielectric layer. The isolation structure has a recess, such that a top profile of the isolation structure is shaped as a funnel. The second conductive layer is disposed on the stacked structures and fills the first opening. The second dielectric layer is disposed between the second conductive layer and the first conductive layer.


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