The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Jun. 22, 2018
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Yuanwei Zheng, San Jose, CA (US);

Chia-Chun Miao, Sunnyvale, CA (US);

Gang Chen, San Jose, CA (US);

Yin Qian, Milpitas, CA (US);

Duli Mao, Sunnyvale, CA (US);

Dyson H. Tai, San Jose, CA (US);

Lindsay Grant, Los Gatos, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H04N 5/378 (2013.01);
Abstract

An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.


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