The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jun. 24, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Po-Nien Chen, Miaoli County, TW;
Bao-Ru Young, Hsinchu County, TW;
Chi-Hsun Hsieh, Taichung, TW;
Harry Hak-Lay Chuang, Singapore, SG;
Wei Cheng Wu, Hsinchu County, TW;
Eric Huang, Miaoli County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An exemplary integrated circuit comprises: a first device gate disposed over the first device region, the first device gate comprising a first interfacial layer and a first dielectric layer; a second device gate disposed over the second device region, the second device gate comprising a second interfacial layer and a second dielectric layer; and a third device gate disposed over the third device region, the third device gate comprising a third interfacial layer and a third dielectric layer, wherein the first interfacial layer, the second interfacial layer, and the third interfacial layer are different from each other in at least one of a thickness and an interfacial material.