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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10418322 B1

PDFFull Text
Date of Patent:
Sep. 17, 2019

Filed:

Dec. 02, 2015

Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto

Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Guilhem Bouton, Peynier, FR;

Patrick Regnier, Rians, FR;

Assignee:

STMicroelectronics (Rousset) SAS, Rousset, FR;

Attorney:

Seed Intellectual Property Law Group LLP

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); G03F 1/50 (2012.01); H01L 23/00 (2006.01); G03F 1/38 (2012.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G03F 1/38 (2013.01); G03F 1/50 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 23/522 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0812 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.

Find Patent Forward Citations

Bouton, Guilhem. (2019). Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto (U.S. Patent No. 10418322). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10418322

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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