The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Sep. 01, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tatsuya Ogi, Yamanashi, JP;
Hiroaki Mochizuki, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01L 13/00 (2006.01); H01L 21/67 (2006.01); G05B 19/05 (2006.01); G05B 19/042 (2006.01); G05B 23/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/10 (2013.01); G01L 13/00 (2013.01); G05B 19/0428 (2013.01); G05B 19/058 (2013.01); H01L 21/67063 (2013.01); G05B 23/0235 (2013.01);
Abstract
A method performed by a semiconductor manufacturing apparatus includes calculating, by a processor of the semiconductor manufacturing apparatus, 3 standard deviations of process condition measurements obtained at a predetermined interval from log information of processing of substrates that have been correctly processed, calculating at least one of an upper limit and a lower limit for anomaly detection based on the calculated 3 standard deviations, and detecting an anomaly in the processing of the substrates based on the at least one of the upper limit and the lower limit.