The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Jun. 04, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsu-Ting Huang, Hsinchu, TW;

Shuo-Yen Chou, Hualien County, TW;

Ru-Gun Liu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/78 (2012.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G03F 1/70 (2013.01); G03F 1/78 (2013.01); G06F 2217/08 (2013.01);
Abstract

Source beam optimization (SBO) methods are disclosed herein for enhancing lithography printability. An exemplary method includes receiving an integrated circuit (IC) design layout and performing an SBO process using the IC design layout to generate a mask shot map and an illumination source map. The SBO process uses an SBO model that collectively simulates a mask making process using the mask shot map and a wafer making process using the illumination source map. A mask can be fabricated using the mask shot map, and a wafer can be fabricated using the illumination source map (and, in some implementations, using the mask fabricated using the mask shot map). The wafer includes a final wafer pattern that corresponds with a target wafer pattern defined by the IC design layout. The SBO methods disclosed herein can significantly reduce (or eliminate) variances between the final wafer pattern and the target wafer pattern.


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