The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Aug. 10, 2018
Renesas Electronics Corporation, Tokyo, JP;
Yoshiki Yamamoto, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The reliability of a semiconductor device is improved. A first insulating film and a protective film are formed on a semiconductor substrate. The first insulating film and the protective film of a first region are selectively removed, and an insulating film is formed on the exposed semiconductor substrate. In a state where the first insulating film in a second region, a third region, and a fourth region is covered with the protective film, the semiconductor substrate is heat-treated in an atmosphere containing nitrogen, thereby introducing nitrogen to the interface between the semiconductor substrate and the second insulating film in the first region. In other words, a nitrogen introduction point is formed on the interface between the semiconductor substrate and the second insulating film. In this configuration, the protective film acts as an anti-nitriding film.