The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
May. 03, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method for fabricating a semiconductor structure includes providing a substrate, forming a plurality of gate electrodes on the substrate, forming a plurality of first sidewall spacers on the side surfaces of the plurality of gate electrodes, forming an oxide layer on the substrate, and forming a plurality of second sidewall spacers on the oxide layer covering the side surfaces of the plurality of first sidewall spacers. Each gate electrode, first sidewall spacers formed on the side surfaces of the gate electrode, and second sidewall spacers formed on the side surfaces of the first sidewall spacers together form a gate structure. The method includes forming an undercut, having an undercut angle made between the oxide layer and the substrate under each second sidewall spacer, and forming a plurality of grooves through the oxide layer and into the substrate. Each groove includes undercuts under second sidewall spacers of adjacent gate structures.