The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Jul. 10, 2017
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventor:
Chen-Wei Pan, Hsinchu County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/365 (2013.01); H01L 21/2253 (2013.01); H01L 21/26533 (2013.01); H01L 21/28035 (2013.01); H01L 29/4916 (2013.01); H01L 29/78 (2013.01); H01L 29/0843 (2013.01);
Abstract
A semiconductor structure including a substrate, a dielectric layer and a polysilicon layer is provided. The dielectric layer is disposed on the substrate. The polysilicon layer is disposed on the dielectric layer. A fluorine dopant concentration in the polysilicon layer presents Gaussian distributions from a top portion to a bottom portion of the polysilicon layer. Fluorine dopant peak concentrations of the Gaussian distributions are progressively decreased from the top portion to the bottom portion of the polysilicon layer.