The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Dec. 28, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An active cell region, an edge termination region surrounding the active cell region and an intermediate region located at an intermediate position between these regions are provided, the active cell region has a trench gate type MOS structure on a top side, and a vertical structure on a bottom side includes a p-collector layer, an n-buffer layer on the p-collector layer, and an n-drift layer on the n-buffer layer, the n-buffer layer has a first buffer portion provided on the p-collector layer side, and a second buffer portion provided on the n-drift layer side, the peak impurity concentration of the first buffer portion is higher than the peak impurity concentration of the second buffer portion, and the impurity concentration gradient on the n-drift layer side of the second buffer portion is gentler than the impurity concentration gradient on the n-drift layer side of the first buffer portion.