The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Mar. 16, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
De Kui Qi, Shanghai, CN;
Abstract
A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate, containing first doping ions and including a pixel region for forming a pixel structure; forming a deeply doped region, in the photosensitive region of the substrate and containing second doping ions; forming a floating diffusion area in the floating diffusion region of the substrate and containing third doping ions; forming a gate structure on the substrate at the junction of the photosensitive region and the floating diffusion region; forming a sidewall film covering the gate structure and the substrate; forming a sidewall spacer; forming a first doped region in the floating diffusion region on one side of the gate structure; forming a metal connection layer on the first doped region; forming an interlayer dielectric layer on the substrate; and forming a source/drain contact plug in the interlayer dielectric layer.