The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Mar. 08, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Osamu Arisumi, Kuwana, JP;

Yusuke Kawano, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11568 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11521 (2017.01); H01L 29/423 (2006.01); H01L 27/11565 (2017.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/11565 (2013.01); H01L 29/41741 (2013.01); H01L 29/4234 (2013.01);
Abstract

According to one embodiment, the source layer includes a semiconductor layer including a dopant. The columnar portions are disposed in an area between the separation portions. The columnar portions extend in the stacking direction through the stacked body and through the semiconductor layer. The columnar portions include a plurality of semiconductor bodies including sidewall portions contacting the semiconductor layer. The dopant diffusion prevention film is provided inside the semiconductor layer and separated from the columnar portions in an area between the columnar portions. The dopant diffusion prevention film is not provided inside the semiconductor layer in an area between the separation portion and the columnar portions.


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