The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

May. 13, 2015
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Sander Frederik Wuister, Eindhoven, NL;

Andre Bernardus Jeunink, Bergeijk, NL;

Emiel Peeters, Eindhoven, NL;

Assignee:

ASML Netherlands B.V., Veidhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); G03F 7/00 (2006.01); C30B 1/04 (2006.01); C30B 29/58 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); B81C 1/00 (2006.01); C09K 13/00 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); C30B 1/04 (2013.01); C30B 29/58 (2013.01); G03F 7/0002 (2013.01); G03F 7/2004 (2013.01); G03F 7/3021 (2013.01); G03F 7/70375 (2013.01); H01L 21/76829 (2013.01); B81C 1/00031 (2013.01); B81C 1/00396 (2013.01); B81C 2201/0149 (2013.01); C09K 13/00 (2013.01); G03F 7/0041 (2013.01); H01L 21/0271 (2013.01); H01L 21/3083 (2013.01);
Abstract

A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.


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