The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Dec. 14, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32009 (2013.01); H01J 37/32165 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF).