The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Mar. 19, 2018
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Atsuro Seino, Toyama, JP;

Arito Ogawa, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/14 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28506 (2013.01); C23C 16/14 (2013.01); C23C 16/303 (2013.01); C23C 16/45527 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/76838 (2013.01);
Abstract

A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.


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