The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Sep. 12, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

David Thompson, San Jose, CA (US);

Benjamin Schmiege, Santa Clara, CA (US);

Jeffrey W. Anthis, San Jose, CA (US);

Abhijit Basu Mallick, Palo Alto, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Ziqing Duan, San Jose, CA (US);

Yihong Chen, San Jose, CA (US);

Kelvin Chan, San Ramon, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/033 (2006.01); C23F 1/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); C23F 1/00 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/321 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/76805 (2013.01); H01L 21/76883 (2013.01); H01L 21/76897 (2013.01);
Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.


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