The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

May. 24, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Thomas Jongwan Kwon, Dublin, CA (US);

Rui Cheng, San Jose, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Er-Xuan Ping, Fremont, CA (US);

Jaesoo Ahn, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/02164 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01); H01L 21/02109 (2013.01); H01L 21/02115 (2013.01); H01L 21/02271 (2013.01);
Abstract

Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.


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