The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Aug. 10, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kandabara N. Tapily, Mechanicville, NY (US);
Takaaki Tsunomura, Akasaka, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of the invention provide selective film deposition in a recessed feature of a substrate using halogen deactivation. A substrate processing method includes a) providing a substrate containing a field area and a recessed feature having a sidewall and a bottom, b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate, c) exposing the substrate to a plasma-excited halogen-containing gas to deactivate or at least partially remove the first precursor layer on the field area of the substrate and the bottom of the recessed feature, and d) exposing the substrate to a second precursor gas that reacts with the first precursor layer to form a material layer on the sidewall of the recessed feature but not on the field area and the bottom of the recessed feature that has been deactivated by the plasma-excited halogen-containing gas.