The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Aug. 29, 2018
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Chen-Hao Po, Hsinchu, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 7/08 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 7/065 (2013.01);
Abstract

A non-volatile memory includes a sense amplifier, a switching element and a power switching circuit. A first sub-cell is connected with a word line, a bit line and a source line. A second sub-cell is connected with the word line, an inverted bit line and an inverted source line. During a read cycle, an activation period of the word line contains a first period and a second period. In the first period, the first sub-cell generates a first read current to a first current path, and the second sub-cell generates a second read current to a second current path. The first current path and the second current path are controlled to be opened according to the correlation of the first read current and the second read current.


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