The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Apr. 17, 2013
Applicant:

Lintec Corporation, Itabashi-ku, JP;

Inventors:

Kunihisa Kato, Itabashi-ku, JP;

Tsuyoshi Mutou, Itabashi-ku, JP;

Assignee:

LINTEC CORPORATION, Itabashi-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/08 (2006.01); H01L 35/16 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01);
U.S. Cl.
CPC ...
H01L 35/08 (2013.01); H01L 35/16 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01);
Abstract

The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate.


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