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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10403676 B1

PDFFull Text
Date of Patent:
Sep. 03, 2019

Filed:

Mar. 31, 2016

Semiconductor device manufacturing method

Applicant:

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Noburo Hosokawa, Hamamatsu, JP;

Nao Inoue, Hamamatsu, JP;

Katsumi Shibayama, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/103 (2006.01); H01L 23/48 (2006.01); H01L 31/0224 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/532 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 31/02005 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 31/107 (2013.01); H01L 24/13 (2013.01); H01L 31/0203 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/11 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/351 (2013.01);
Abstract

A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.

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