The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
May. 26, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Masaru Fuku, Tokyo, JP;
Noriyuki Besshi, Tokyo, JP;
Ryuichi Ishii, Tokyo, JP;
Takayuki Yamada, Tokyo, JP;
Takao Mitsui, Tokyo, JP;
Komei Hayashi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.