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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10403498 B1

PDFFull Text
Date of Patent:
Sep. 03, 2019

Filed:

Oct. 29, 2014

Group iii-v compound semiconductor nanowire, field effect transistor, and switching element

Applicants:

National University Corporation Hokkaido University, Sapporo-shi, Hokkaido, JP;

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Takashi Fukui, Sapporo, JP;

Katsuhiro Tomioka, Sapporo, JP;

Assignees:

NATIONAL UNIVERSITY CORPORATION HAKKAIDO UNIVERSITY, Sapporo-Shi, Hokkaido, JP;

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-Shi, Saitama, JP;

Attorney:

Brundidge & Stanger, P.C.

Primary Examiner:

Ori Nadav

Int. Cl.
CPC ...
H01L 21/02 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); H01L 29/41 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/786 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02373 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02538 (2013.01); H01L 21/02546 (2013.01); H01L 21/02603 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02658 (2013.01); H01L 29/045 (2013.01); H01L 29/068 (2013.01); H01L 29/0676 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/413 (2013.01); H01L 29/66469 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/78642 (2013.01); B82Y 30/00 (2013.01);
Abstract

The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (−110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.

Find Patent Forward Citations

Fukui, Takashi. (2019). Group iii-v compound semiconductor nanowire, field effect transistor, and switching element (U.S. Patent No. 10403498). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10403498

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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