The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Mar. 12, 2018
Micron Technology, Inc., Boise, ID (US);
Amitava Majumdar, Boise, ID (US);
Rajesh Kamana, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Shawn D. Lyonsmith, Boise, ID (US);
Ervin T. Hill, Boise, ID (US);
Zengtao T. Liu, Eagle, ID (US);
Marlon W. Hug, Kuna, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.