The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Sep. 26, 2014
Synopsys, Inc., Mountain View, CA (US);
Yong-Seog Oh, Pleasanton, CA (US);
Michael C. Shaughnessy-Culver, Napa, CA (US);
Stephen Lee Smith, Mountain View, CA (US);
Jie Liu, San Jose, CA (US);
Victor Moroz, Saratoga, CA (US);
Pratheep Balasingam, San Jose, CA (US);
Terry Sylvan Kam-Chiu Ma, Danville, CA (US);
SYNOPSYS, INC., Mountain View, CA (US);
Abstract
An electronic design automation tool includes an application program interface API. The API includes a set of parameters and procedures supporting atomistic scale modeling of electronic materials. The procedures include a procedure to execute first principles calculations, a procedure to process results from the first principles calculations to extract device scale parameters from the results, and a procedure to determine whether the device scale parameters extracted from the results lie within a specified range of the stored information for the material. The procedures also include a procedure to parameterize an input parameter of a first principles procedure, including a procedure to execute a set of DFT computations across an input parameter space to characterize sensitivity of one of the intermediate parameter and the output parameter. Also included is a procedure to execute a second set of DFT computations across a refined input parameter space. Additional procedures include a first atomistic scale procedure to produce a set of preliminary configurations for the specified material, and a second atomistic scale procedure that utilizes DFT computations to refine the preliminary configurations and to produce the parameter set using refined configurations. The procedures include a procedure that utilizes DFT computations to parameterize the force field computations.