The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Nov. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Shen Chou, Zhubei, TW;

Po-Zeng Kang, Hsin-Hua, TW;

Yung-Chow Peng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/02 (2006.01); G01R 27/08 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 27/025 (2013.01); G01R 27/08 (2013.01); G01R 31/2837 (2013.01);
Abstract

An integrated circuit (IC) includes a first transistor having a first dopant type and a second transistor having a second dopant type opposite to the first dopant type. The first transistor includes a first terminal configured to receive a current, a second terminal connected to a node, and a first gate, and the second transistor includes a first terminal connected to a device under test (DUT), a second terminal connected to the node, and a second gate. Each one of the first gate, the node, or the second gate is capable of receiving a first voltage from a first voltage source simultaneously with another one of the first gate, the node, or the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.


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