The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Aug. 04, 2016
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Keiji Wada, Itami, JP;
Hironori Itoh, Itami, JP;
Takemi Terao, Osaka, JP;
Kenji Kanbara, Itami, JP;
Taro Nishiguchi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.