The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jan. 05, 2017
Chang Gung University, Taoyuan, TW;
CHANG GUNG UNIVERSITY, Taoyuan, TW;
Abstract
A semiconductor structure having a multiple-porous graphene layer includes a sapphire substrate, a single or multiple layer porous graphene film, and a gallium nitride layer. A fabrication method for forming the semiconductor structure having a single or multiple layer porous graphene film, includes: firstly, growing up the graphene on the copper foil; then, using the acetone and isopropyl alcohol to wash the sapphire substrate, and then using the nitrogen flow to dry up; transferring the graphene onto the semiconductor substrate, using the Poly(methyl methacrylate) to fix the single or multiple layer porous graphene film, and using the acetone to wash up; using the photolithography process to etch the whole surface of the multiple-porous graphene layer; and, using the metalorganic chemical vapor deposition to deposit gallium nitride on the single or multiple layer porous graphene film and the sapphire substrate.