The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 06, 2018
United Microelectronics Corp., Hsinchu, TW;
Shin-Hung Li, Nantou County, TW;
Kuan-Chuan Chen, Taichung, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.