The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jul. 25, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 27/115 (2017.01); H01L 27/11521 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76224 (2013.01); H01L 21/76837 (2013.01); H01L 27/115 (2013.01); H01L 27/1157 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01);
Abstract
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars include storage material elements that are at least partially interposed by the buried void.