The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jul. 20, 2018
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Kazuhisa Yamamura, Hamamatsu, JP;
Kenichi Sato, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A photodiode arrayhas a plurality of photodetector channelswhich are formed on an n-type substratehaving an n-type semiconductor layer, with a light to be detected being incident to the plurality of photodetector channels. The photodiode arraycomprises: a p-type semiconductor layerformed on the n-type semiconductor layerof the substrate; resistorseach of which is provided to each of the photodetector channelsand is connected to a signal conductorat one end thereof; and an n-type separating partformed between the plurality of photodetector channels. The p-type semiconductor layerforms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating partis formed so that each of the multiplication regions AM of the p-type semiconductor layercorresponds to each of the photodetector channels