The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 24, 2016
Asm Ip Holding B.v., Almere, NL;
Young Hoon Kim, Cheonan-si, KR;
Dae Youn Kim, Daejeon, KR;
Seung Woo Choi, Cheonan-si, KR;
Hyung Wook Noh, Anyang-si, KR;
Yong Min Yoo, Seoul, KR;
Hak Joo Lee, Incheon, KR;
ASM IP Holding B.V., Almere, NL;
Abstract
Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining ato athat are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a×G+a×G+ . . . +a×G)| is less than a minimum value among G, G, . . . , and G, where n is 2 or greater integer, G, . . . , and Grespectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.