The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Dec. 30, 2017
Spin Transfer Technologies, Inc., Fremont, CA (US);
Elizabeth A. Dobisz, San Jose, CA (US);
Girish Jagtiani, Santa Clara, CA (US);
Yuan-Tung Chin, Fremont, CA (US);
Thomas D. Boone, San Carlos, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A method for manufacturing magnetic random access memory. The method allows very high density magnetic memory elements to be formed on a magnetic memory chip. A magnetic memory element material is deposited and a diamond like carbon (DLC) hard mask is formed over the magnetic memory element material. An ion or atom bombardment process such as ion milling is performed to remove portions of the magnetic memory element material that are not protected by the hard mask to form a plurality of magnetic memory element pillars. Because the diamond like carbon hard mask is resistant to the material removal processes such as ion milling, it can be made very thin (10-20 nm), which reduces shadowing while still allowing a process such as ion milling to be used to define the magnetic data element pillars. This advantageously allows the pillars to be formed with well defined, vertical sidewalls, and avoiding shorting.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile