The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jun. 08, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ping Zheng, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Elgin Kiok Boone Quek, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Devices and methods for forming a device are disclosed. A substrate having circuit component formed on a substrate surface is provided. Back end of line processing is performed to form an upper inter level dielectric (ILD) layer over the substrate. The upper ILD layer includes a plurality of ILD levels. A pair of magnetic tunneling junction (MTJ) stacks is formed in between adjacent ILD levels of the upper ILD layer. Each of the MTJ stack includes a fixed layer, a tunneling barrier layer and a free layer. The fixed layer has a first width. The tunneling barrier layer is formed on the fixed layer. The free layer is formed on the tunneling barrier layer. The free layer has a second width. The first width is wider than the second width.


Find Patent Forward Citations

Loading…