The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jun. 28, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shao-Ping Chen, Kaohsiung, TW;
Huan-Chi Ma, Tainan, TW;
Chien-Wen Yu, Kaohsiung, TW;
Kuo-Chin Hung, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 23/5226 (2013.01); H01L 29/456 (2013.01);
Abstract
A method for forming a semiconductor device is disclosed. A p-type field-effect transistor (p-FET) is formed on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate and completely covers the p-FET. At least an opening is formed in the dielectric layer and exposes a source/drain region of the p-FET. A conductive material is then formed filling the opening, wherein the conductive material comprises a first stress; specifically, a tensile stress between 400 and 800 MPa.