The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Mar. 13, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Panpan Liu, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Abstract
A 3-D flash memory device and its manufacturing method, relating to semiconductor technology. The manufacturing method comprises: providing a semiconductor structure comprising a substrate, a first insulation layer on the substrate, a fin structure comprising a first gate layer and a second insulation layer stacked alternately over each other on the first insulation layer, a third insulation layer on two sides of the fin structure, with the first gate layer being surrounded by the first, the second and the third insulation layers, and at least one channel layer covering the fin structure and the third insulation layer; and forming a groove by etching the channel layer, the second insulation layer and the first gate layer along an extension direction of the fin structure. This inventive concept improves the storage density of a 3-D flash memory device.