The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Feb. 09, 2016
Hitachi Chemical Company, Ltd., Tokyo, JP;
Kazuyuki Mitsukura, Tokyo, JP;
Masaya Toba, Tokyo, JP;
Kenichi Iwashita, Tokyo, JP;
Kohsuke Urashima, Tokyo, JP;
Kazuhiko Kurafuchi, Tokyo, JP;
HITACHI CHEMICAL COMPANY, LTD., Tokyo, JP;
Abstract
To provide a manufacturing method capable of manufacturing a high density semiconductor device excellent in transmission between chips at a favorable yield and at low cost. A method for manufacturing a semiconductor device includes an insulating layer forming step of forming an insulating layerhaving a trenchabove a substrate, a copper layer forming step of forming a copper layeron the insulating layerso as to fill the trench, and a removing step of removing the copper layeron the insulating layerby a fly cutting method so as to retain a copper layer part in the trench