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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388601 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Dec. 14, 2017

Semiconductor devices including conductive lines and methods of forming the semiconductor devices

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

William R. Brown, Boise, ID (US);

Jenna L. Russon, Boise, ID (US);

Tim H. Bossart, Boise, ID (US);

Brian R. Watson, Boise, ID (US);

Nikolay A. Mirin, Boise, ID (US);

David A. Kewley, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/02 (2006.01); H01L 27/11519 (2017.01); G01R 1/073 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); H01L 49/02 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 27/108 (2006.01); H01L 21/3213 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/0337 (2013.01); H01L 21/32139 (2013.01); H01L 21/76838 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01); G01R 1/073 (2013.01); G01R 31/2601 (2013.01); G06F 17/5068 (2013.01); H01L 21/76816 (2013.01); H01L 21/76895 (2013.01); H01L 22/30 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01); H01L 27/10882 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10891 (2013.01); H01L 27/11519 (2013.01);
Abstract

A semiconductor device including conductive lines is disclosed. First conductive lines each comprise a first portion, a second portion, and an enlarged portion, the enlarged portion connecting the first portion and the second portion of the first conductive line. The semiconductor device includes second conductive lines, at least some of the second conductive lines disposed between a pair of the first conductive lines, each second conductive line including a larger cross-sectional area at an end portion of the second conductive line than at other portions thereof. The semiconductor device includes a pad on each of the first conductive lines and the second conductive lines, wherein the pad on each of the second conductive lines is on the end portion thereof and the pad on each of the first conductive lines is on the enlarged portion thereof.

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