The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Oct. 06, 2017
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Inventors:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0495 (2013.01); H01L 21/046 (2013.01); H01L 29/66143 (2013.01); H01L 21/26506 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.