The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Nov. 06, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nelson M. Felix, Briarcliff Manor, NY (US);
Martin Glodde, Pine Brook, NJ (US);
Dario L. Goldfarb, Dobbs Ferry, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/039 (2006.01); H01L 21/027 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/321 (2006.01); H01L 29/04 (2006.01); H01L 21/3213 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/0392 (2013.01); G03F 7/16 (2013.01); G03F 7/325 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/321 (2013.01); H01L 21/32139 (2013.01); H01L 29/04 (2013.01);
Abstract
A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).