The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Dec. 17, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Rainer Bonitz, Bruckmuehl, DE;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 16/08 (2013.01); G11C 16/04 (2013.01); G11C 16/26 (2013.01);
Abstract

Apparatus, and methods of operating similar apparatus, might include an array of memory cells and a differential storage device configured to receive information indicative of a data value stored in a particular memory cell of the array of memory cells selected for a programming operation. The differential storage device might include a first non-volatile memory cell connected between a first isolation gate and a voltage node configured to receive a first voltage level, and a second non-volatile memory cell connected between a second isolation gate and the voltage node, and logic responsive to an indication of a loss of power to the apparatus and the information indicative of the data value stored in the particular memory cell to store data to the differential storage device, wherein a gate of the second non-volatile memory cell is connected to a gate of the first non-volatile memory cell.


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