The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Sep. 18, 2015
Applicant:

Masimo Semiconductor, Inc., Irvine, CA (US);

Inventors:

Steven J. Wojtczuk, Lexington, MA (US);

Xuebing Zhang, Acton, MA (US);

William J. MacNeish, III, Newport Beach, CA (US);

Assignee:

MASIMO SEMICONDUCTOR, INC., Irvine, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61B 5/00 (2006.01); H01L 31/105 (2006.01); H01L 31/0304 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
A61B 5/0059 (2013.01); H01L 31/02162 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); A61B 5/6826 (2013.01); A61B 2562/0238 (2013.01); Y02E 10/544 (2013.01);
Abstract

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

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