The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Dec. 18, 2017
Nxp Usa, Inc., Austin, TX (US);
Yu-Ting David Wu, Schaumburg, IL (US);
Enver Krvavac, Kildeer, IL (US);
Joseph Gerard Schultz, Wheaton, IL (US);
Nick Yang, Wilmette, IL (US);
Damon G. Holmes, Scottsdale, AZ (US);
Shishir Ramasare Shukla, Chandler, AZ (US);
Jeffrey Kevin Jones, Chandler, AZ (US);
Elie A. Maalouf, Mesa, AZ (US);
Mario Bokatius, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.